丝印代码：C25J；SN74LVC2G125 Dual Bus Buffer Gate With 3-State Outputs

1 Features 1• ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model – 1000-V Charged-Device Model • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC •

丝印代码：C25J；SN74LVC2G125 Dual Bus Buffer Gate With 3-State Outputs

1 Features 1• ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model – 1000-V Charged-Device Model • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC •

丝印代码：C25J；SN74LVC2G125 Dual Bus Buffer Gate With 3-State Outputs

1 Features 1• ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model – 1000-V Charged-Device Model • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC •

丝印代码：C25J；SN74LVC2G125 Dual Bus Buffer Gate With 3-State Outputs

1 Features 1• ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model – 1000-V Charged-Device Model • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC •

丝印代码：C25J；SN74LVC2G125 Dual Bus Buffer Gate With 3-State Outputs

1 Features 1• ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model – 1000-V Charged-Device Model • Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC •

25A AUTOMOTIVE RECTIFIER CELL

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Die Size 164 mil HEX

25A AUTOMOTIVE CELL DIODE

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25A AUTOMOTIVE CELL DIODE

文件：31.46 Kbytes Page：2 Pages