N- and P-Channel Enhancement-Mode Dual MOSFET

General Description\nThe Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. ► Low threshold\n► Low on resistance\n► Low input capacitance\n► Fast switching speeds\n► Freedom from secondary breakdown\n► Low input and output leakage\n► Independent, electrically isolated N- and P channelsApplications\n► Medical ultrasound transmitters\n► High voltage pulsers\n► Amplifi ers\n► ;

NPN Epitaxial Planar Silicon Transistor

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Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS

DESCRIPTION The TDA2320 is a monolithic integrated circuit in Dip package especially designed to amplify the IR signal in remote controlled TV or radio sets. It directly in terfaces the digital control circuitry. The TDA2320 incorporates a two-stage amplifier with excellent sensitivity and

STEREO AMPLIFIER

DESCRIPTION The TDA2320A is a stereo class A preamplifier in tended for application in portable cassette players and high quality audio systems. The TDA2320A is a monolithic integrated circuit in a 8 lead plastic dip. .WIDE SUPPLY VOLTAGE RANGE (3 to 36V) .SINGLE OR SPLIT SUPPLY OPER

Frequency Synthesizer for RF Personal Communications

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Frequency Synthesizer for RF Personal Communications

文件：409.41 Kbytes Page：22 Pages