丝印代码：C225；Designed for 1.65V to 5.5V VCC Operation

General Description The SN74LVC1G125 is a high performance non−inverting buffer operating from a 1.65V to 5.5V supply. This device is fabricated with advanced CMOS technology to achieve ultra-high speed with high output drive. Features ● Designed for 1.65V to 5.5V VCC Operation ● Overvol

Silicon NPN triple diffusion planar type

For high breakdown voltage general amplification ■Features •High collector-emitter voltage (Base open) VCEO •High transition frequency fT •TO-126B package which requires no insulation plate for installation to the heat sink

Silicon NPN triple diffusion planar type Transistor

For high breakdown voltage general amplification■ •High collector-emitter voltage (Base open) VCEO\n•High transition frequency fT\n•TO-126B package which requires no insulation plate for installation to the heat sink;

包装：散装 描述：LABEL NETWORK ADH 标签，标志，护栏，标识 标签，贴纸，贴标 - 空白

包装：散装 描述：LABEL NETWORK ADH 标签，标志，护栏，标识 标签，贴纸，贴标 - 空白

OPTUMUM C225X450FJJ LASER/INKJET LABELS

文件：53.13 Kbytes Page：1 Pages

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)