IESNA Type V (square) beam for wide areas such as car parks

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包装：托盘 描述：MULTI-LENS SQUARE 16 POS 49.5MM 光电器件 光学 - 镜头

IESNA Type IV for wider roads and area lighting like car parks and yards.

文件：2.15494 Mbytes Page：5 Pages

包装：托盘 描述：MULTI-LENS SQUARE 16 POS 49.5MM 光电器件 光学 - 镜头

光电附件

3.3 and 5.0 Volt MicroMonitor?

DESCRIPTION The DS1707/DS1708 3.3 or 5.0 Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, voltage sense, and external override. A precision temperature–compensated reference and comparator circuit monitors the status of VCC at the device and at an upstream poi

3.3 and 5.0 Volt MicroMonitor?

DESCRIPTION The DS1707/DS1708 3.3 or 5.0 Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, voltage sense, and external override. A precision temperature–compensated reference and comparator circuit monitors the status of VCC at the device and at an upstream poi

Integrated Circuit TV Tuner Band Selector

Description: This NTE1708 is a tuner band selector integrated circuit in a 9–Lead SIP type package intended for use in electronic tuning type TV sets. This device outputs supply voltages to the tuner unit according to 2–input band select signals. Features: • 2 Inputs, 4 Outputs • Dec

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (T

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (T