位置:首页 > IC中文资料 > C106D

C106D晶体管资料

  • C106D别名:C106D三极管、C106D晶体管、C106D晶体三极管

  • C106D生产厂家

  • C106D制作材料:50HZ-Thy

  • C106D性质

  • C106D封装形式:直插封装

  • C106D极限工作电压:400V

  • C106D最大电流允许值:2.2A

  • C106D最大工作频率:<1MHZ或未知

  • C106D引脚数:3

  • C106D最大耗散功率

  • C106D放大倍数

  • C106D图片代号:A-83

  • C106Dvtest:400

  • C106Dhtest:999900

  • C106Datest:2.2

  • C106Dwtest:0

  • C106D代换 C106D用什么型号代替:C108D,TAG106D,TAG108D,X0403D,

C106D价格

参考价格:¥0.8413

型号:C106D1G 品牌:ON 备注:这里有C106D多少钱,2026年最近7天走势,今日出价,今日竞价,C106D批发/采购报价,C106D行情走势销售排行榜,C106D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
C106D

Sensitive Gate Silicon Controlled Rectifiers

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features

ONSEMI

安森美半导体

C106D

4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, remote warning and triggering applications.

CENTRAL

C106D

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

MOTOROLA

摩托罗拉

C106D

4-A Sensitive-Gate Silicon Controlled Rectifiers

4-A Sensitive-Gate Silicon Controlled Rectifiers For Power-Switching and Control Application

GESS

C106D

SILICON CONTROLLED RECTIFIER

SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

C106D

SCRs

Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control sys

HAOPIN

好品微电子

C106D

Sensitive Gate Silicon Controlled Rectifiers

Features • Glassivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Sensitive Gate Triggering • Pb−

SYC

C106D

2.55A Silicon Controlled Rectifier

This Silicon Controlled Rectifier is packaged in TO-126 package, which has an average on-state current of 2.55 A.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

C106D

Silicon Planar PNPN Thyristor (4A SCR)

文件:516.789 Kbytes Page:2 Pages

FS

SILICON CONTROLLED RECTIFIER

DESCRIPTION: The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important.

CENTRAL

Sensitive Gate Silicon Controlled Rectifiers

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features

ONSEMI

安森美半导体

SCRs

SCRs

CENTRAL

Sensitive Gate Silicon Controlled Rectifiers

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features

ONSEMI

安森美半导体

Thyristors

Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • Glassivated Surface for Reliability and Uniformity •

LITTELFUSE

力特

可控硅整流器

• 玻璃化表面可实现可靠性与均匀性\n• 实际水平触发和保持特性\n• 灵敏栅极触发\n• 可提供无铅包装*;

LITTELFUSE

力特

SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, and remote warning and triggerin

CENTRAL

Thyristors

Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • Glassivated Surface for Reliability and Uniformity •

LITTELFUSE

力特

Sensitive Gate Silicon Controlled Rectifiers

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features

ONSEMI

安森美半导体

The Type C106 Silicon Controlled Rectifier

文件:111.06 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCR 400V 4A TO225AA 分立半导体产品 晶闸管 - SCR

LITTELFUSE

力特

The Type C106 Silicon Controlled Rectifier

文件:111.06 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Through-Hole SCR

CENTRAL

The Type C106 Silicon Controlled Rectifier

文件:111.06 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The Type C106 Silicon Controlled Rectifier

文件:111.06 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Planar PNPN Thyristor (4A SCR)

文件:511.42 Kbytes Page:2 Pages

FS

Silicon Planar PNPN Thyristor (4A SCR)

文件:511.42 Kbytes Page:2 Pages

FS

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCR 400V 4A TO225AA 分立半导体产品 晶闸管 - SCR

LITTELFUSE

力特

isc Thyristors

文件:209.89 Kbytes Page:1 Pages

ISC

无锡固电

Silicon Planar PNPN Thyristor (4A SCR)

文件:511.42 Kbytes Page:2 Pages

FS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

MOTOROLA

摩托罗拉

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

MOTOROLA

摩托罗拉

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

MOTOROLA

摩托罗拉

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

MOSPEC

统懋

C106D产品属性

  • 类型

    描述

  • Case:

    TO-202

  • Configuration/ Description:

    SCR

  • VDRM MAX:

    400V

  • IT(RMS) MAX:

    4A

  • ITSM MAX:

    20A

  • IGT MAX:

    200μA

  • VGT MAX:

    0.8V

  • IH MAX:

    3mA

  • VTM MAX:

    2.2V

  • @ITM:

    4A

更新时间:2026-5-14 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Littelfnse
24+
TO-126
5000
全新原装正品,现货销售
ON/安森美
25+
TO-225AA
30000
原装正品公司现货,假一赔十!
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
LITTELFUSE/力特
NA
275000
一级代理原装正品,价格优势,长期供应!
ON/安森美
21+
TO-225AA
8080
只做原装,质量保证
ON/安森美
24+
TO-225AA
10000
十年沉淀唯有原装
LITTELFUSE
20+
TO-126
5000
只做原装正品
ON
23+
TO-126
11846
一级代理商现货批发,原装正品,假一罚十
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货C106DG即刻询购立享优惠#长期有排单订
LITTELFUSE
原厂封装
9800
原装进口公司现货假一赔百

C106D数据表相关新闻

  • C0603C104K5RAC3121

    C0603C104K5RAC3121

    2023-3-21
  • C0603C112J5GACTU 多层陶瓷电容器

    C0603C112J5GACTU 多层陶瓷电容器MLCC - SMD/SMT 50V 1100pF 0603 C0G 0.05

    2023-3-1
  • C1206C106K4RACTU产品中文资料

    C1206C106K4RACTU产品中资料

    2020-6-13
  • C099-F9P应用板 C099-F9P-2-02

    u-blox的C099-F9P应用板可通过多频段RTK轻松评估u-blox ZED-F9P

    2019-12-3
  • C1206C473M5RACTU

    製造商: KEMET 產品類型: 多層陶瓷電容器MLCC - SMD/SMT RoHS: 詳細資料 終端: Standard 電容: 0.047 uF 直流電額定電壓: 50 VDC 電介質: X7R 耐受性: 20 %_ 外殼代碼 - in: 1206 外殼代碼 - mm: 3216 高度: 0.78 mm 最低工作溫度: - 55 C 最高工作溫度: + 125 C 產品: General Type MLCCs 終

    2019-11-19
  • C1093-可调节精密并联稳压器

    描述 该mPC1093可调精密并联稳压器的热稳定性保证。输出电压可设置之间的任何参考电压(2.495 V)和36 V值由两个外部电阻器。这些IC可应用于开关稳压器的误差放大器。 特征 •高精度的VREF=2.495伏±2% •低温度系数DVREF/ dt的百万分之100英镑/℃ •通过两个外部电阻器的VREF££旁白可调输出电压36伏特 •低动态阻抗| ZKA| =0.1 WTYP。 订购信

    2018-12-19