BZW04-33B价格

参考价格:¥0.7953

型号:BZW04-33B 品牌:STMicroelectronics 备注:这里有BZW04-33B多少钱,2025年最近7天走势,今日出价,今日竞价,BZW04-33B批发/采购报价,BZW04-33B行情走势销售排行榜,BZW04-33B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BZW04-33B

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W FEATURES ♦ Plastic package has underwriters laboratory flammability classification 94V-0 ♦ Glass passivated junction ♦ 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01 ♦ Excellent clamping c

BILIN

银河微电

BZW04-33B

TRANSZORB® Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Sold

VishayVishay Siliconix

威世威世科技公司

BZW04-33B

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in DO-41 package • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Low incremental surge resistance • Excellent clamping capability

MDE

BZW04-33B

TRANSIL

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 400 W

STMICROELECTRONICS

意法半导体

BZW04-33B

Transient Voltage Suppressor

BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W Features ♦ Plastic package has underwriters laboratory flammability classification 94V-0 ♦ Glass passivated junction ♦ 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01 ♦ Excellen

LUGUANG

鲁光电子

BZW04-33B

TRANSIL

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 400 W

STMICROELECTRONICS

意法半导体

BZW04-33B

Transient Voltage Suppressors

FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast response time • Low incremental surge resist

TAYCHIPST

泰迪斯电子

BZW04-33B

Voltage regulator dides

FEATURES ■ PEAK PULSE POWER : 400 W (10/1000µs) ■ STAND-OFF VOLTAGE RANGE : From 5.8V to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ UL RECOGNIZED

TAYCHIPST

泰迪斯电子

BZW04-33B

400 Watts Transient Voltage Suppressor Diodes

Features ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ Exceeds environmental standards of MIL-STD-19500 ◇ 400W surge capability at 10 x 1000 us waveform, ◇ Excellent clamping capability ◇ Low impedance surge resistance ◇ Very fast response time V ◇ Typic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BZW04-33B

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:TVS DIODE 33.3VWM 53.9VC DO204AL 电路保护 TVS - 二极管

TSC

台湾半导体

BZW04-33B

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

文件:200.66 Kbytes Page:4 Pages

MDE

BZW04-33B

Transient Voltage Suppressor

文件:209.54 Kbytes Page:6 Pages

TSC

台湾半导体

BZW04-33B

封装/外壳:DO-204AC,DO-15,轴向 包装:卷带(TR) 描述:TVS DIODE 33.3VWM 53.9VC DO15 电路保护 TVS - 二极管

STMICROELECTRONICS

意法半导体

BZW04-33B

MINI TYPE LED LAMPS

文件:293.43 Kbytes Page:1 Pages

DBLECTRO

Transient voltage suppressor diodes

DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plas

Philips

飞利浦

3W 33V Zener diode

文件:378.43 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

SURFACE MOUNT SILICON ZENER DIODES

文件:378.422 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

Zener Diodes with Surge Current Specification

文件:184.23 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Zener Diodes with Surge Current Specification

文件:83.49 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

BZW04-33B产品属性

  • 类型

    描述

  • 型号

    BZW04-33B

  • 功能描述

    TVS 二极管 - 瞬态电压抑制器 400W 33V Bidirect

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 极性

    Bidirectional

  • 击穿电压

    58.9 V

  • 钳位电压

    77.4 V

  • 峰值浪涌电流

    38.8 A

  • 封装/箱体

    DO-214AB

  • 最小工作温度

    - 55 C

  • 最大工作温度

    + 150 C

更新时间:2025-11-20 10:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
24+
NA
3079
进口原装正品优势供应
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
IRVISHAY
24+
NA
99000
只做原装正品现货 欢迎来电查询15919825718
STM
25+
DO-15
6985
就找我吧!--邀您体验愉快问购元件!
SST
原厂封装
9800
原装进口公司现货假一赔百
Taiwan Semiconductor(台湾半导
24+
DO204AL(DO41)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
VISHAY
24+
con
35960
查现货到京北通宇商城
VISHAY
24+/25+
DO-204AL(DO-41)
71530
原装正品现货库存价优
ST
24+
con
2500
雷卯品牌降本替代型号P4KE22CA
VISHAY
24+
NA
5645
公司原厂原装现货假一罚十!特价出售!强势库存!

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