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BZT5229

SILICON PLANAR ZENER DIODES

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SEMTECH_ELEC

先之科半导体

稳压二极管

STMICROELECTRONICS

意法半导体

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

PANJIT

強茂

Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

PHILIPS

飞利浦

BZT5229产品属性

  • 类型

    描述

  • VZT_Min(V):

    4.09

  • VZT_Nom(V):

    4.3

  • VZT_Max(V):

    4.51

  • VZT_IZT(mA):

    20

  • ZZT_(Ω) @IZT:

    22

  • ZZK(Ω):

    2000

  • ZZK_IZK(mA):

    0.25

  • Package Outline:

    LS-34

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