位置：首页 > IC中文资料第6483页 > BY401
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BY401 | TRANSIENT VOLTAGE SUPPRESSOR 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | TRANSIENT VOLTAGE SUPPRESSOR 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | GENERAL PURPOSE DIODES 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | GENERAL PURPOSE DIODES 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | TRANSIENT VOLTAGE SUPPRESSOR 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | GENERAL PURPOSE DIODES 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BY401 | General Purpose Diodes 文件：351.16 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs | PANJIT 強茂 | | ||
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res | POLYFET | | ||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages | NSC 国半 | | ||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages | NSC 国半 | | ||
Fast Settling, Wideband High-Gain Monolithic Op Amp 文件：388.71 Kbytes Page：6 Pages | NSC 国半 | |
BY401产品属性
- 类型
描述
- 型号
BY401
- 制造商
NJSEMI
- 制造商全称
New Jersey Semi-Conductor Products, Inc.
- 功能描述
General Purpose Diodes
BY401规格书下载地址
BY401参数引脚图相关
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- BY402
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- BY399Z
- BY399SZ
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- BY399P-E3/54
- BY399P-E3
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- BY399_ R2 _10001
- BY399 R0
- BY399 _AY _10001
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BY401数据表相关新闻
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2019-11-25
DdatasheetPDF页码索引
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