GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● High temperature metallurgically bonded construction ● Glass passivated cavity-free junction ● Capable of meeting environmental stand

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage – 50 to 1300 Volts Forward Current – 1.0 Ampere Features • Low forward voltage drop • High Surge current capability

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop

GLASS PASSIVATED SILICON RECTIFIER

GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 1250 to 1300 Volts Forward Current -1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS

FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop

普通整流二极管

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

文件：48.23 Kbytes Page：2 Pages

1 Amp Glass Passivated Rectifier 1300 Volts

Features • Halogen free available upon request by adding suffix -HF • Low Current Leakage and Low Cost • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Glass Passivated Junction • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensiti

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.3KV 1A DO204AC 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AC，DO-15，轴向 包装：带盒（TB） 描述：DIODE GEN PURP 1.3KV 1A DO204AC 分立半导体产品 二极管 - 整流器 - 单

DIODE GEN PURP 1.3KV 1A DO204AC

DIODE GEN PURP 1.3KV 1A DO204AC

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages