isc Silicon NPN Power Transistors

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

isc Silicon NPN Power Transistors

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages