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BUW132晶体管资料

  • BUW132别名:BUW132三极管、BUW132晶体管、BUW132晶体三极管

  • BUW132生产厂家:荷兰飞利浦公司

  • BUW132制作材料:Si-NPN

  • BUW132性质:开关管 (S)_功率放大 (L)

  • BUW132封装形式:直插封装

  • BUW132极限工作电压:450V

  • BUW132最大电流允许值:8A

  • BUW132最大工作频率:<1MHZ或未知

  • BUW132引脚数:3

  • BUW132最大耗散功率:80W

  • BUW132放大倍数

  • BUW132图片代号:B-62

  • BUW132vtest:450

  • BUW132htest:999900

  • BUW132atest:8

  • BUW132wtest:80

  • BUW132代换 BUW132用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
BUW132

isc Silicon NPN Power Transistors

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

ISC

无锡固电

isc Silicon NPN Power Transistors

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

ISC

无锡固电

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

BUW132产品属性

  • 类型

    描述

  • 型号

    BUW132

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    isc Silicon NPN Power Transistors

更新时间:2026-5-17 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIP
25+23+
TO-218
16469
绝对原装正品全新进口深圳现货
24+
TO-3
412
PHI
24+
TO-3P
5000
全新原装正品,现货销售
恩XP
23+
TO-3P
5000
原装正品,假一罚十
PHILIP
24+
TO-218
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
PHI
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TO-3P
20+
PHILIPS
36800
原装优势主营型号-可开原型号增税票
PHI
00+
TO-3P
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
2023+
TO-3P
8800
正品渠道现货 终端可提供BOM表配单。
PHI
22+
TO-3P
6000
十年配单,只做原装

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