isc Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

isc Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

isc N-Channel MOSFET Transistor

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

Aluminum Capacitors Axial Long-Life, DIN-Based

FEATURES • Long useful life: up to 15 000 h at 85 °C • Taped versions up to case Ø 15 mm x 30 mm available for automatic insertion • Charge and discharge proof • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, insulated with a blu

GABINETE S ALMENDRA 111 X 83 X 64 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S GRIS 111 X 83 X 64 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

Aluminum Capacitors Axial Long Life, DIN-Based

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High breakdown voltage 10KV/15KV

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