isc Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS132 500V (Min)-BUS132A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

isc Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS132 500V (Min)-BUS132A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

1 5/16

FEATURES • Suitable model for all industrial applications • Center tap available • Continuous rotation and mechanical stops both standard • Large electrical angle: 352° ± 2° • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

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