isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) • High Current Capability • Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS • Designed for switching and linear applications in military and industrial equipment.

HIGH CURRENT NPN SILICON TRANSISTORS

The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.

HIGH CURRENT NPN SILICON TRANSISTOR

DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. ■ NPN TRANSISTOR ■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLI

HIGH CURRENT NPN SILICON TRANSISTOR

DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. ■ SGS-THOMSON PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ MAINTAINS GOOD SWITCHING PERFORMANCE EVEN

HIGH CURRENT NPN SILICON TRANSISTORS

LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.

HIGH CURRENT NPN SILICON

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Bipolar Junction Transistors

HIGH CURRENT NPN SILICON TRANSISTORS

The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.

HIGH CURRENT NPN SILICON

文件：21.52 Kbytes Page：2 Pages

Bipolar Junction Transistors