NPN Lighting Transistor

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that th

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that th

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12