HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The BUL810 is manufactured using high voltage multiepitaxial mesa technology for cost-effective high performance. It uses a hollow emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Feat

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. ·Electronic transformer for halogen lamps ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies

封装/外壳：TO-247-3 包装：卷带（TR） 描述：TRANS NPN 450V 15A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

High voltage fast-switching NPN power transistor

文件：216.99 Kbytes Page：10 Pages

High voltage fast-switching NPN power transistor

文件：216.99 Kbytes Page：10 Pages

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla