High voltage fast-switching NPN power transistor

Description The BUL416T is an high voltage fast-switching NPN power transistor manufactured in planar technology with diffused collector. This device is designed for lighting and SMPS applications where high voltage capability is needed coupled with high switching speed. Features ■ High voltage

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 800V 6A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

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