isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat) = 0.5V(Max) @ IC= 1A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ STMicroelectronics PREFERRED SALESTYPE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

High Speed, Low Drift FET Operational Amplifier

Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier.

High Speed, Low Drift FET Operational Amplifier

Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier.

SUBMINIATURE FUSES

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POWER TRANSFORMER

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TO-8 CASCADABLE AMPLIFIERS

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