isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat) = 0.5V(Max) @ IC= 1A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ STMicroelectronics PREFERRED SALESTYPE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Schottky Barrier Diodes

Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Genera

Super ARGUS LED High-Current, 3 mm T1 LED, Non Diffused

Features ● colored, clear package ● plastic package with a special design ● appropriate for high ambient light because of the higher operating current (typ. 50 mA) ● in connection with an additional, custom built reflector suitable for backlighting of display panels ● uniform illumi

Silicon Complementary Transistors Audio Frequency Driver

Silicon Complementary Transistors Audio Frequency Driver

Round.Top View Type

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