位置：首页 > IC中文资料第171页 > BUL1403ED
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUL1403ED | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The BUL1403ED is a new device, designed for fluorescent electronic ballast 277 VAC push-pull applications (up to 4 lamps). This device, it can be used without baker clamp and transil protection, reducing greatly the component count. ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK | STMICROELECTRONICS 意法半导体 |   | |
BUL1403ED | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：200.95 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
BUL1403ED | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 650V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
BUL1403ED | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 文件：200.95 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
PRECISION LOW VOLTAGE REFERENCE A precision band−gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V 25 mV • Input Voltage Range: 4.5 V t | ONSEMI 安森美半导体 | | ||
Low Voltage Reference A precision band–gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V ±25 mV • Input Voltage Range: 4.5 V | MOTOROLA 摩托罗拉 | | ||
PRECISION LOW VOLTAGE REFERENCE A precision band−gap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to 12 bits in accuracy, or as a reference for power supply applications. • Output Voltage: 2.5 V 25 mV • Input Voltage Range: 4.5 V t | ONSEMI 安森美半导体 | | ||
LOW NOISE GaAs FET? DESCRIPTION The MGF1403B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATUR | MITSUBISHI 三菱电机 | | ||
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE | MITSUBISHI 三菱电机 | |
BUL1403ED产品属性
- 类型
描述
- 型号
BUL1403ED
- 功能描述
两极晶体管 - BJT NPN Hi-Volt Fast Sw
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO220ABNONISOL |
8866 |
||||
ST |
220F |
20100 |
全新 发货1-2天 |
||||
STM |
16+14+ |
TO-220 |
242 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
ST/意法 |
05+PB |
HVSOF-6 |
3200 |
全新、原装 |
|||
ST/意法 |
25+ |
220F |
90000 |
全新原装现货 |
|||
STMICROELECTRONICSSEMI |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ST/意法 |
23+ |
220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
BUL1403ED规格书下载地址
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DdatasheetPDF页码索引
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