SEMICONDUCTORS

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V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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LC2MOS Precision Mini-DIP Analog Switch

GENERAL DESCRIPTION The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. FEATURES 44 V Supply Maximum Ratings VSS to VDD Analo

LC2MOS Precision Mini-DIP Analog Switch

GENERAL DESCRIPTION The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. FEATURES 44 V Supply Maximum Ratings VSS to VDD Analo

UHF variable capacitance diode

DESCRIPTION The BB417 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Hermetically sealed leaded glass SOD68 (DO-34) package • C15: 3 pF; ratio: 3.5. APPLICATION

NPN SILICON PLANAR AVALANCHE TRANSISTOR

FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

Compact, Surface Mount Ultra-high Speed Response OPIC Photocoupler

■ Features 1. Mini-flat package 2. Ultra-high speed response ( tPHL , t PLH : TYP. 0.3 µs at R L = 1.9kΩ ) 3. Isolation voltage between input and output ( Viso : 2 500 Vrms ) 4. High instantaneous common mode rejection voltage ( CM H : TYP. 1kV/ µ s ) 5. Recognized by UL(No.64380) ■