Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.5V(Max) @IC=1A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies

Silicon NPN High Voltage Switching Transistor

Silicon NPN High Voltage Switching Transistor

文件：64.319 Kbytes Page：8 Pages

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

One-Port SAW

文件：125.3 Kbytes Page：2 Pages

Class H/K, J and R ferrule and blade fuse reducers

文件：547.66 Kbytes Page：2 Pages