HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is desig

High Voltage

DESCRIPTION • High Voltage • High Speed Switching APPLICATIONS • Designed for use in high-frequency power supplies and motor control applications.

SEMICONDUCTORS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

High Voltage

DESCRIPTION • High Voltage • High Speed Switching APPLICATIONS • Designed for use in high-frequency power supplies and motor control applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUF420A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is design

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control ap

高压快速切换NPN功率晶体管

The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. \n\n The BUF series is designed for use • STMicroelectronics PREFERRED SALESTYPE \n• VERY HIGH SWITCHING SPEED \n• HIGH VOLTAGE CAPABILITY \n• LOW BASE-DRIVE REQUIREMENTS \n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION;

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-3 packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid or motor

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is desig

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is desig

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 450V 30A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 450V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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High-Speed, Voltage Feedback Op Amp

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