丝印代码：BUF11705；22-V Supply, 101 Channel Gamma Correction Buffer

FEATURES Wide Supply Range: 7 V to 22 V Gamma Correction Channels: 10 Integrated VCOM Buffer Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output Powe

丝印代码：BUF11705；22-V Supply, 101 Channel Gamma Correction Buffer

FEATURES Wide Supply Range: 7 V to 22 V Gamma Correction Channels: 10 Integrated VCOM Buffer Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output Powe

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 24-CHANNEL GAMMA – 22-CHANNEL PROGRAMMABLE – 2-CHANNEL STATIC GAMMA • 2-CHANNEL PROGRAMMABLE VCOM • 10-BIT RESOLUTION • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT MEMORY BANKS • RAIL-TO-RAIL OUTPUT • LOW SUPPLY CURRENT: 0.5mA/channel • SUPPLY VOLTAGE: 9V to 20V •

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 8-CHANNEL P-GAMMA • 1-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT: 300mV Minimum Swing-to-Rail (10mA) > 300mA Maximum IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DI

Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory

1FEATURES 23• 10-BIT RESOLUTION • 8-CHANNEL P-GAMMA • 1-CHANNEL P-VCOM • HIGH SLEW RATE V COM: 45V/μs • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY

BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O

Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 24-CHANNEL GAMMA – 22-CHANNEL PROGRAMMABLE – 2-CHANNEL STATIC GAMMA • 2-CHANNEL PROGRAMMABLE VCOM • 10-BIT RESOLUTION • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT MEMORY BANKS • RAIL-TO-RAIL OUTPUT • LOW SUPPLY CURRENT: 0.5mA/channel • SUPPLY VOLTAGE: 9V to 20V •

22-V Supply, 101 Channel Gamma Correction Buffer

FEATURES Wide Supply Range: 7 V to 22 V Gamma Correction Channels: 10 Integrated VCOM Buffer Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output Powe

22V 电源 10+1 通道伽玛校正缓冲器

The BUF11705 is a multi-channel buffer targeted towards gamma correction in high-resolution LCD panels. It is pin-compatible with the existing BUF11702 and BUF11704 and operates at higher supply voltages up to 22 V (24 V absolute max). The higher supply voltage enables faster response times and brig • Wide Supply Range: 7 V to 22 V• Gamma Correction Channels: 10• Integrated VCOM Buffer• Excellent Output Current Drive:• Gamma Channels: > 30 mA at 0.5 V Swing to Rails\n• VCOM: > 100 mA typ at 2 V Swing to Rails\n• Large Capacitive Load Drive Capability• Rail-to-Rail Output• PowerPAD™ Package• Low;

22 - V Supply, 10 1 Channel Gamma Correction Buffer

文件：304.1 Kbytes Page：17 Pages

Programmable Gamma-Voltage Generator with Integrated Two-Bank Memory and External EEPROM

文件：1.03216 Mbytes Page：32 Pages

Programmable Gamma-Voltage Generator

文件：1.02923 Mbytes Page：31 Pages

Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory

文件：1.08774 Mbytes Page：31 Pages

Programmable Gamma-Voltage Generator and High Slew Rate VCOM

文件：1.19689 Mbytes Page：35 Pages

22 - V Supply, 10 1 Channel Gamma Correction Buffer

文件：304.1 Kbytes Page：17 Pages