型号 功能描述 生产厂家 企业 LOGO 操作
BUD42D

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Features

ONSEMI

安森美半导体

BUD42D

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 350V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BUD42D

High Speed, High Gain Bipolar NPN Transistor

文件:184.09 Kbytes Page:12 Pages

ONSEMI

安森美半导体

BUD42D

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Features

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Features

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Transistor

文件:184.09 Kbytes Page:12 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 350V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High Speed, High Gain Bipolar NPN Transistor

文件:184.09 Kbytes Page:12 Pages

ONSEMI

安森美半导体

BUD42D产品属性

  • 类型

    描述

  • 型号

    BUD42D

  • 功能描述

    两极晶体管 - BJT 4A 650V 25W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-19 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
ON
24+
TO-251
32000
只做原装正品现货 欢迎来电查询15919825718
ON
25+23+
TO251
73879
绝对原装正品现货,全新深圳原装进口现货
MOT
05+
原厂原装
24026
只做全新原装真实现货供应
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON/安森美
25+
TO-251
11000
原装正品,假一罚十!
ON
23+
TO-251
32000
专做原装正品,假一罚百!
ON/安森美
24+
NA/
11000
优势代理渠道,原装正品,可全系列订货开增值税票
ON/安森美
23+
DPAK
15000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
24+
40000

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