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BU808DXI晶体管资料

  • BU808DXI别名:BU808DXI三极管、BU808DXI晶体管、BU808DXI晶体三极管

  • BU808DXI生产厂家:德国电子元件股份公司

  • BU808DXI制作材料:Si-N+Darl+Di

  • BU808DXI性质:绝缘 (Iso)

  • BU808DXI封装形式:直插封装

  • BU808DXI极限工作电压:1500V

  • BU808DXI最大电流允许值:12A

  • BU808DXI最大工作频率:<1MHZ或未知

  • BU808DXI引脚数:3

  • BU808DXI最大耗散功率:35W

  • BU808DXI放大倍数

  • BU808DXI图片代号:B-10

  • BU808DXIvtest:1500

  • BU808DXIhtest:999900

  • BU808DXIatest:12

  • BU808DXIwtest:35

  • BU808DXI代换 BU808DXI用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

PERKINELMER

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

NEC

瑞萨

更新时间:2026-5-14 17:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SOT-363SO
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
2223+
SOT-523
26800
只做原装正品假一赔十为客户做到零风险
NEC
25+
SOP5脚管
2987
只售原装自家现货!诚信经营!欢迎来电!
NEC/原装
22+
SOT-523
20000
公司只做原装 品质保障
NEC
24+
SOT-523
9200
新进库存/原装
NEC
2025+
SOT-363
7695
全新原厂原装产品、公司现货销售
NEC
2450+
SOT-363
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
24+
SOT-363
23400
原装现货假一赔十
NEC
2023+
SOT-523
3000
原厂全新正品旗舰店优势现货
NEC
08+PB
SOT-363
200000

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