位置:首页 > IC中文资料第11509页 > BU706F

BU706F晶体管资料

  • BU706F别名:BU706F三极管、BU706F晶体管、BU706F晶体三极管

  • BU706F生产厂家

  • BU706F制作材料:Si-N+Di

  • BU706F性质:绝缘 (Iso)

  • BU706F封装形式:直插封装

  • BU706F极限工作电压:1500V

  • BU706F最大电流允许值:5A

  • BU706F最大工作频率:<1MHZ或未知

  • BU706F引脚数:3

  • BU706F最大耗散功率:32W

  • BU706F放大倍数

  • BU706F图片代号:B-70

  • BU706Fvtest:1500

  • BU706Fhtest:999900

  • BU706Fatest:5

  • BU706Fwtest:32

  • BU706F代换 BU706F用什么型号代替:BU508AF,2SC4142,2SC4243,2SD1545,2SD1546,

型号 功能描述 生产厂家 企业 LOGO 操作
BU706F

isc Silicon NPN Power Transistor

文件:104.59 Kbytes Page:2 Pages

ISC

无锡固电

BU706F

Silicon NPN Power Transistor

文件:136.12 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PANASONIC

松下

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

POSEICO

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

BU706F产品属性

  • 类型

    描述

  • 型号

    BU706F

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    isc Silicon NPN Power Transistor

更新时间:2026-5-14 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
25+
VSON010V3030
24500
罗姆全系列在售
Rohm(罗姆)
18+
9800
代理进口原装/实单价格可谈
ROHM/罗姆
24+
VSON-10
45000
原装现货,专业配单专家
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ROHM/罗姆
2022+
ROHM
8000
只做原装支持实单,有单必成。
ROHM/罗姆
23+
VSON010V3030
15800
专业配单,原装正品假一罚十,代理渠道价格优
ROHM
25+
VSON10
30000
原厂原装,价格优势
ST
23+
NA
2860
原装正品代理渠道价格优势
ROHM/罗姆
23+
VSON-10
9000
原装正品假一罚百!可开增票!
ROHM/罗姆
21+
VSON-10
45000
只做原装,一定有货,不止网上数量,量多可订货!

BU706F数据表相关新闻