BU706D晶体管资料
BU706D别名:BU706D三极管、BU706D晶体管、BU706D晶体三极管
BU706D生产厂家:
BU706D制作材料:Si-N+Di
BU706D性质:电视 (TV)_行输出 (HA)
BU706D封装形式:直插封装
BU706D极限工作电压:1500V
BU706D最大电流允许值:5A
BU706D最大工作频率:<1MHZ或未知
BU706D引脚数:3
BU706D最大耗散功率:100W
BU706D放大倍数:
BU706D图片代号:B-70
BU706Dvtest:1500
BU706Dhtest:999900
- BU706Datest:5
BU706Dwtest:100
BU706D代换 BU706D用什么型号代替:BU508D,2SC3481,2SC3482,2SC3681,2SD1878,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BU706D | isc Silicon NPN Power Transistor 文件:104.74 Kbytes Page:2 Pages | ISC 无锡固电 | ||
BU706D | Silicon NPN Power Transistor 文件:135.03 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
BU706D | Trans GP BJT NPN 700V 5A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
Trans GP BJT NPN 700V 5A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistor 文件:137.81 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor 文件:106.31 Kbytes Page:2 Pages | ISC 无锡固电 | |||
High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier ■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa | PANASONIC 松下 | |||
PHASE CONTROL THYRISTOR PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA | POSEICO | |||
Silicon Controlled Rectifiers Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P | MOTOROLA 摩托罗拉 | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | POLYFET | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu | POLYFET |
BU706D产品属性
- 类型
描述
- Configuration:
Single
- Material:
Si
- Maximum Collector Emitter Saturation Voltage:
5@1.33A@3AV
- Maximum Collector Emitter Voltage:
700V
- Maximum DC Collector Current:
5A
- Maximum Emitter Base Voltage:
6V
- Maximum Operating Temperature:
150ᄀC
- Maximum Power Dissipation:
100000mW
- Type:
NPN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Rohm(罗姆) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ROHM/罗姆 |
21+ |
VSON-10 |
45000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
24+ |
TO-3PN |
10000 |
全新 |
||||
恩XP |
22+ |
TO-3PF |
6000 |
十年配单,只做原装 |
|||
MUELLER ELECTRIC |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
ROHM |
25+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
ROHM/罗姆 |
25+ |
VSON010V3030 |
24500 |
罗姆全系列在售 |
|||
ST |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
|||
ROHM/罗姆 |
24+ |
VSON-10 |
45000 |
原装现货,专业配单专家 |
|||
Rohm(罗姆) |
18+ |
9800 |
代理进口原装/实单价格可谈 |
BU706D芯片相关品牌
BU706D规格书下载地址
BU706D参数引脚图相关
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BU706D数据表相关新闻
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DdatasheetPDF页码索引
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