High Voltage Switching

High Voltage Switching • Use In Horizontal Deflection Output Stage

NPN Power Transistors

NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltag

NPN EPITAXIAL SILICON TRANSISTOR

BU407/407H HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter

NPN POWER TRANSISTOR

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

NPN EXPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. FEATURES * High breakdown voltage

NPN PLASTIC POWER TRANSISTORS

Horizontal Deflection Output Stages of TV and CRT

NPN SLICON POWER TRANSISTOR JEDEC TO-220 CASE

DESCRIPTION The CENTRAL SEMICONDUCTOR BU406 series types are Silicon NPN High Voltage Power Transistors designed for fast switching, horizontal deflection output stages of monitors.

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

Power Transistor

Feature: NPN bipolar power transistors for use in high voltage, high speed transistors for horizontal deflection circuits of TVs and CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in TV horizontal output and switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s

NPN SILICON POWER TRANSISTORS

● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

HIGH CURRENT NPN SILICON TRANSISTOR

DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec TO-220 plastic package. They are fast switching, high voltage devices foe use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computers terminals. ■ SGS-THOMS

Bipolar Transistor

The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. • High breakdown voltage;

High Voltage Switching

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三极管

NPN TO-220 Plastic-Encapsulate Transistors

Silicon NPN Power Transistors

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Silicon NPN Power Transistor

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 150V 7A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-220 - Power Transistors and Darlingtons

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NPN SILICON POWER TRANSISTORS

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Quad exclusive OR gate

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Quadruple Exclusive OR gates

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Quadruple Exclusive OR gates

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Quad exclusive OR gate

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

POWER TRANSISTORS(7A,150-200V,60W)

NPN POWER TRANSISTOR

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage • Fast switching speed • Low saturation voltage • Built-in damper diode APPLICATIONS • For use in horizontal deflection output stages of TV’s and CTV’s circuits

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

isc Silicon NPN Power Transistors

DESCRIPTION • High Voltage • Fast Switching Speed- : toff= 0.75μs (Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in converters, inverters, switching regulators and motor control systems etc.

isc Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • High Voltage • Fast Switching Speed-: toff= 0.75μs (Max) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS • Designed for use in converters, inverters, switching regulators and motor control systems etc.

NPN Power Transistors

NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltag

High Voltage Switching

High Voltage Switching • Use In Horizontal Deflection Output Stage

POWER TRANSISTORS(7A,150-200V,60W)

NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s

NPN EXPITAXIAL PLANAR TRANSISTOR

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NPN EXPITAXIAL PLANAR TRANSISTOR

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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封装/外壳：14-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE XOR 4CH 2-INP 14DIP 集成电路（IC） 门和反相器

High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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High Voltage CMOS Logic ICs >Gate>

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Silicon NPN Power Transistor

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NPN Power Transistors

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NPN EXPITAXIAL PLANAR TRANSISTOR

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NPN EXPITAXIAL PLANAR TRANSISTOR

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Silicon NPN Power Transistor

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NPN EXPITAXIAL PLANAR TRANSISTOR

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NPN EXPITAXIAL PLANAR TRANSISTOR

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NPN EXPITAXIAL PLANAR TRANSISTOR

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