Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

LOWDROP DUAL POWER OPERATIONAL AMPLIFIERS

DESCRIPTION The L2720, L2722 and L2724 are monolithic integrated circuits in powerdip, minidip and SIP-9 packages, intended for use as power operational amplifiers in a wide range of applications including servo amplifiers and power supplies. They are particularly indicated for driving, inductiv

LIGHT BARS

DESCRIPTION The OLB 2620/YLB 2720/GLB 2820 series light bars are rectangular displays. They are configured in a dual in-line package with a mechanical barrier creating four isolated rectangular light emitting areas.