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BU133晶体管资料

  • BU133别名:BU133三极管、BU133晶体管、BU133晶体三极管

  • BU133生产厂家:荷兰飞利浦公司_RTC_德国凡尔伏公司

  • BU133制作材料:Si-NPN

  • BU133性质:开关管 (S)_功率放大 (L)

  • BU133封装形式:直插封装

  • BU133极限工作电压:750V

  • BU133最大电流允许值:3A

  • BU133最大工作频率:8MHZ

  • BU133引脚数:2

  • BU133最大耗散功率:30W

  • BU133放大倍数

  • BU133图片代号:E-44

  • BU133vtest:750

  • BU133htest:8000000

  • BU133atest:3

  • BU133wtest:30

  • BU133代换 BU133用什么型号代替:BU126,BU326,BUS11,BUX82,2SC3091,2SC3155,3DK205E,

型号 功能描述 生产厂家 企业 LOGO 操作
BU133

Silicon NPN Power Transistors

文件:128.5 Kbytes Page:3 Pages

ISC

无锡固电

BU133

Silicon NPN Power Transistor

文件:128.86 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BU133

Silicon NPN Power Transistors

文件:108.97 Kbytes Page:3 Pages

SAVANTIC

BU133

Silicon NPN Power Transistors

文件:110.55 Kbytes Page:3 Pages

SAVANTIC

BU133

Trans GP BJT NPN 250V 3A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

BU133产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    750V

  • Maximum Collector Emitter Saturation Voltage:

    1.5@0.5A@2AV

  • Maximum Collector Emitter Voltage:

    250V

  • Maximum DC Collector Current:

    3A

  • Maximum Emitter Base Voltage:

    7V

  • Maximum Operating Temperature:

    200ᄀC

  • Maximum Power Dissipation:

    30000mW

  • Maximum Transition Frequency:

    8(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-13 17:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
TO-3
20000
原装,请咨询
ROHM
26+
DIP
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
JST
连接器
123500
一级代理 原装正品假一罚十价格优势长期供货
ROHM
23+
DIP
2500
绝对全新原装!优势供货渠道!特价!请放心订购!
JST
23+
NA
65000
正规渠道,只有原装!
JST/日压
2608+
/
337362
一级代理,原装现货
ST/意法
23+
TO-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
26+
TO-3
60000
只有原装 可配单
JST/日压
22+
连接器
787289
代理-优势-原装-正品-现货*期货
24+
TO-3
10000
全新

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