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BU125晶体管资料

  • BU125别名:BU125三极管、BU125晶体管、BU125晶体三极管

  • BU125生产厂家:德国电子元件股份公司

  • BU125制作材料:Si-NPN

  • BU125性质:开关管 (S)_功率放大 (L)_电视 (TV)

  • BU125封装形式:直插封装

  • BU125极限工作电压:130V

  • BU125最大电流允许值:7A

  • BU125最大工作频率:<1MHZ或未知

  • BU125引脚数:3

  • BU125最大耗散功率:10W

  • BU125放大倍数

  • BU125图片代号:C-40

  • BU125vtest:130

  • BU125htest:999900

  • BU125atest:7

  • BU125wtest:10

  • BU125代换 BU125用什么型号代替:BU406,BU407,BU408,BUY47,BUY48,BUY80,BUY81,2N4895,2N4896,2N4897,3DD601B,

型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

丝印代码:BU125;SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

1 Features 1• High-Bandwidth Data Path (up to 500 MHz(1)) • 5-V Tolerant I/Os With Device Powered Up or Powered Down • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) • Rail-to-Rail Switching on Data I/O Ports – 0-V to 5-V Switching With 3.3-V VC

TI

德州仪器

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

NTE

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

PERKINELMER

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

PHILIPS

飞利浦

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

BU125产品属性

  • 类型

    描述

  • 功能描述:

    TRANSISTOR

更新时间:2026-5-15 15:50:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
23+
NA
20000
TI
21+
SSOP
1346
只做原装正品,不止网上数量,欢迎电话微信查询!
TI/德州仪器
2023+
SSOP16
30000
一级代理优势现货,全新正品直营店
TI
24+
原厂原封
6523
进口原装公司百分百现货可出样品
TI/德州仪器
24+
SSOP-16
9600
原装现货,优势供应,支持实单!
TI
23+
SSOP
5000
全新原装,支持实单,非诚勿扰
TI(德州仪器)
25+
SSOP16
3238
原装现货,免费供样,技术支持,原厂对接
TI
25+
SSOP-16
18746
样件支持,可原厂排单订货!
TI
23+
SSOP
3200
公司只做原装,可来电咨询
TI
25+
SSOP16
11306

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