位置：首页 > IC中文资料第886页 > BTS611L1NK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu | Infineon 英飞凌 |   | ||
Smart Two Channel Highside Power Switch General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh | SIEMENS 西门子 | | ||
Fast demagnetization of inductive loads 文件：438.74 Kbytes Page：14 Pages | Infineon 英飞凌 | |
BTS611L1NK产品属性
- 类型
描述
- 型号
BTS611L1NK
- 制造商
Infineon Technologies AG
- 功能描述
Power Switch Hi Side 1.8A 7-Pin(7+Tab) TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
9548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon(英飞凌) |
24+ |
- |
5063 |
百分百原装正品,可原型号开票 |
|||
INFINEO |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
11+ |
TO220-7 |
360 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
SOT263-7 |
32360 |
INFINEON/英飞凌全新特价BTS611L1即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
22+ |
SOT-263-5 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
54658 |
百分百原装现货 实单必成 |
|||
INFINEON |
24+/25+ |
50 |
原装正品现货库存价优 |
||||
INFINEON/英飞凌 |
24+ |
TO263-7 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
22+ |
TO-263-7 |
12500 |
原装正品支持实单 |
BTS611L1NK规格书下载地址
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DdatasheetPDF页码索引
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