采用智能 SIPMOS 技术的 N 通道垂直功率 FET。嵌入式保护功能提供全面保护

采用Smart SIPMOS技术的N通道垂直功率FET。完全受嵌入式保护功能保护。\n   • 逻辑电平输入\n• 输入保护（ESD）\n• 具有锁定功能的热关断\n• 环保产品（符合 RoHS）\n• 过载保护\n• 短路保护\n• 过电压保护\n• 电流限制\n• 可进行模拟驾驶\n\n \n\n优势:;

Smart Low Side Power Switch

文件：277.67 Kbytes Page：11 Pages

Smart Low Side Power Switch

文件：277.67 Kbytes Page：11 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWTCH N-CHAN 1:1 SOT223-4 集成电路（IC） 配电开关，负载驱动器

General-purpose dual line amplifier

CD Amplifiers / Low-Frequency , Small-Signal Amplifiers

Marktech Standard 5mm w/Standoffs

FEATURES • Cost Effective • Reliable and Rugged • IC Compatible • With standoffs

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES • TrenchMOS output stage • Current limiting • Overload protection • Overtemperature protection • Protection latched reset by

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD