低边开关

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. • Logic Level Input\n• Input Protection (ESD)\n• Thermal shutdown with latch\n• Green product (RoHS compliant)\n• Overload protection\n• Short circuit protection\n• Overvoltage protection\n• Current limitation\n• Analog driving possible\n\n优势:;

Smart Low Side Power Switch

文件：279.29 Kbytes Page：11 Pages

Smart Lowside Power Switch

文件：218.27 Kbytes Page：10 Pages

Smart Low Side Power Switch

文件：366.23 Kbytes Page：11 Pages

Smart Low Side Power Switch

文件：279.29 Kbytes Page：11 Pages

Smart Low Side Power Switch

文件：366.23 Kbytes Page：11 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 TO252-3 集成电路（IC） 配电开关，负载驱动器

General-purpose dual line amplifier

CD Amplifiers / Low-Frequency , Small-Signal Amplifiers

Marktech Standard 5mm w/Standoffs

FEATURES • Cost Effective • Reliable and Rugged • IC Compatible • With standoffs

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES • TrenchMOS output stage • Current limiting • Overload protection • Overtemperature protection • Protection latched reset by

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD