Smart Low Side Power Switch

General Description N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Short circuit and Overload protection • Overvoltage protection • Current

采用智能 SIPMOS ®技术的 N 通道垂直功率 FET。提供嵌入式保护功能。

 采用Smart SIPMOS® 技术的N通道垂直功率FET。•提供嵌入式保护功能。\n ctions. • 逻辑电平输入\n• 输入保护（ESD）\n• 具有锁定功能的热关断\n• 短路保护和过载保护\n• 过电压保护\n• 电流限制\n• 通过外部输入电阻实现状态反馈\n• 可进行模拟驾驶\n• AEC 认证\n• 环保产品（符合 RoHS）\n\n\n优势:;

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 TO263-3 集成电路（IC） 配电开关，负载驱动器

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages