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型号 功能描述 生产厂家 企业 LOGO 操作
BTS132

TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Logic level ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

SIEMENS

西门子

BTS132

TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Logic level ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

INFINEON

英飞凌

BTS132

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 24A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.065Ω(Max)@VGS= 4.5V DESCRIPTION · Motor drive, DC-DC converter, power switch

ISC

无锡固电

BTS132

TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

INFINEON

英飞凌

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

NEC

瑞萨

BTS132产品属性

  • 类型

    描述

  • 型号

    BTS132

  • 制造商

    Infineon Technologies AG

  • 功能描述

    Trans MOSFET N-CH 60V 24A 3-Pin(3+Tab) TO-220AB

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价BTS132即刻询购立享优惠#长期有货
INENOI
20+
TO-220
200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
sie
23+
NA
1605
专做原装正品,假一罚百!
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON
2025+
TO263
3645
全新原厂原装产品、公司现货销售
英飞凌
24+
NA
6000
只做原装正品现货 欢迎来电查询15919825718
Infineon/英飞凌
25+
TO220
9800
全新原装现货,假一赔十
INFIEON
25+
TO220
2987
绝对全新原装现货供应!
Infineon
2004
TO220
2060
原装现货海量库存欢迎咨询

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