NPN SILICON PLANAR TRANSISTOR

NPN SILICON PLANAR TRANSISTOR NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX62, BSX63 types are NPN Silicon Transistors designed for general purpose applications where high collector current is required. MARKING: FULL PART NUMBER

SWITCHING TRANSISTORS

SWITCHING TRANSISTORS The BSX62 and BSX63 are NPN switching transistors mounted in TO-39 metal package. They are intended for use in medium power switching. High current and low voltage. Compliance to RoHS.

Bipolar NPN Device in a Hermetically sealed TO39

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 3A

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-39 metal package. FEATURES • High current (max. 3 A) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

NPN SILICON PLANAR TRANSISTORS

NPN Silicon Planar Transistors

Bipolar Junction Transistors

NPN SILICON PLANAR TRANSISTORS

NPN Silicon Planar Transistors

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-39 metal package. FEATURES • High current (max. 3 A) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

Bipolar NPN Device in a Hermetically sealed TO39

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 3A

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-39 metal package. FEATURES • High current (max. 3 A) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

Bipolar NPN Device in a Hermetically sealed TO39

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 45V IC = 3A

NPN SILICON PLANAR TRANSISTORS

NPN Silicon Planar Transistors

Bipolar NPN Device in a Hermetically sealed

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 60V IC = 3A

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：BSX63-10 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

Bipolar Junction Transistors