DC~4GHz Wide Band Single Pole Double Throw Switch

文件：289.57 Kbytes Page：4 Pages

SPDT Switch

文件：742.37 Kbytes Page：5 Pages

DC~4GHz Wide Band Single Pole Double Throw Switch

文件：643.79 Kbytes Page：5 Pages

SPDT Switch

文件：766.69 Kbytes Page：5 Pages

Wide Band RF Switch

SPDT Switch

文件：742.37 Kbytes Page：5 Pages

SPDT Switch

文件：766.69 Kbytes Page：5 Pages

DC~4GHz Wide Band Single Pole Double Throw Switch

文件：643.79 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

TO-220 8A Triac

文件：58.07 Kbytes Page：2 Pages