SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 150V IC = 2A

NPN switching transistors

FEATURES • High current (max. 1 A) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Industrial applications. DESCRIPTION NPN transistor in a TO-39 metal package.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件：123.14 Kbytes Page：3 Pages

Bipolar Junction Transistors

NPN switching transistors

FEATURES • High current (max. 1 A) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Industrial applications. DESCRIPTION NPN transistor in a TO-39 metal package.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN switching transistors

DESCRIPTION NPN transistor in a TO-39 metal package. FEATURES • High current (max. 1A) • High voltage (max. 150 V) APPLICATIONS • General purpose switching and amplification • Industrial applications.

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.35 Kbytes Page：1 Pages

Bipolar Junction Transistors