丝印代码：O2；SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BST82 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicati

N-Channel Enhancement Mode MOSFET

Features ® Low on-resistance ® High-speed switching ® Drive circuits can be simple ® Parallel use is easy

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-channel enhancement mode field-effect transistor