SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

COMPLIMENTARY TYPE - BSS63 PARTMARKING DETAIL - BSS64 - U3 BSS64R - U6

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.

NPN high-voltage transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BSS63. FEATURES • Low current (max. 100 mA) • High voltage (max. 80 V). APPLICATIONS • High-voltage general purpose and switching applications • Intended for application in thick and thin-film circuits.

NPN Silicon AF and Switching Transistors

NPN Silicon AF and Switching Transistors • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX42, BSS63 (PNP)

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN General Purpose Amplifier

Features • NPN general purpose amplifier

NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)

NPN Silicon AF and Switching Transistor ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 42, BSS 63 (PNP)

丝印代码：AM；NPN high voltage transistor

FEATURES •Low current (max. 100 mA) •High voltage (max. 80 V). APPLICATIONS •High-voltage general purpose and switching applications •Intended for thick and thin-film circuit applications. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BSS63.

NPN high voltage transistor

NPN 通用放大器

该器件设计用于通用高压放大器和气体放电显示驱动。 采用工艺16设计。

NPN Silicon AF and Switching Transistors

• For general AF applications\n• High breakdown voltage\n• Low collector-emitter saturation voltage\n• Complementary types: BCX42, BSS63 (PNP)

High-voltage Amplifier Transistor (100V, 100mA)

BSS64 is a SOT-23 package Transistor for high voltage amplifier. ·High breakdown voltage. (BVCEO=100V)\n·Complements the BSS63.;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 80V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：K9F；High-voltage Amplifier Transistor (100V, 100mA)

Features 1) High breakdown voltage. (BVCEO=100V) 2) Complements the BSS63 HZG. Application HIGH VOLTAGE AMPLIFIER

Driver Transistors(NPN Silicon)

Driver Transistors NPN Silicon

Driver Transistor(NPN)

Driver Transistor NPN Silicon INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct

Driver Transistor(NPN Silicon)

Driver Transistor NPN Silicon INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ins

Driver Transistor

Driver Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Driver Transistor

Driver Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Driver Transistor

Driver Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

COMPLIMENTARY TYPE - BSS63 PARTMARKING DETAIL - BSS64 - U3 BSS64R - U6

SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

COMPLIMENTARY TYPE - BSS63 PARTMARKING DETAIL - BSS64 - U3 BSS64R - U6

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 0.1A SST3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Driver Transistor

文件：75.71 Kbytes Page：3 Pages

Driver Transistor

文件：75.71 Kbytes Page：3 Pages