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BSS63晶体管资料
BSS63别名：BSS63三极管、BSS63晶体管、BSS63晶体三极管
BSS63生产厂家：德国凡尔伏公司
BSS63制作材料：Si-PNP
BSS63性质：表面帖装型 （SMD）_通用型 （Uni）
BSS63封装形式：贴片封装
BSS63极限工作电压：110V
BSS63最大电流允许值：0.1A
BSS63最大工作频率：85MHZ
BSS63引脚数：3
BSS63最大耗散功率：
BSS63放大倍数：
BSS63图片代号：H-15
BSS63vtest：110
BSS63htest：85000000
- BSS63atest：0.1
BSS63wtest：0
BSS63代换 BSS63用什么型号代替：BCX42,2SA1257,2SA1325,2SA1330,3DG180A,
BSS63价格
参考价格：￥0.1651
型号：BSS63 品牌：Fairchild 备注：这里有BSS63多少钱，2025年最近7天走势，今日出价，今日竞价，BSS63批发/采购报价，BSS63行情走势销售排行榜，BSS63报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSS63 | PNP high-voltage transistor DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. FEATURES • Low current (max. 100 mA) • High voltage (max. 100 V). APPLICATIONS • High-voltage general purpose • Switching applications. | Philips 飞利浦 |   | |
BSS63 | SMALL SIGNAL PNP TRANSISTOR SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE LOW FREQUENCY APPLICATONS ■ NPN COMPLEMENT IS BSS64 | STMICROELECTRONICS 意法半导体 | | |
BSS63 | PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) PNP Silicon AF and Switching Transistors ● For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 41, BSS 64 (NPN) | SIEMENS 西门子 | | |
BSS63 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. | KECKEC CORPORATION KEC株式会社 | | |
BSS63 | PNP Silicon AF an Swiching Transistors PNP Silicon AF an Swiching Transistors • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX41, BSS64 (NPN) | Infineon 英飞凌 | | |
BSS63 | Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | | |
BSS63 | SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR COMPLIMENTARY TYPE - BSS64 PARTMARKING DETAIL - BSS63 - T3 BSS63R - T6 | Zetex | | |
BSS63 | PNP General Purpose Amplifier Features • PNP general purpose amplifier | KEXIN 科信电子 | | |
BSS63 | PNP high-voltage transistor | ETC 知名厂家 | ETC | |
BSS63 | High-voltage Amplifier Transistor Features 1) High breakdown voltage. (BVCEO=-100V) 2) Complements the BSS64. Application HIGH VOLTAGE AMPLIFIER | ROHM 罗姆 | | |
BSS63 | PNP high-voltage transistor FEATURES •Low current (max. 100 mA) •High voltage (max. 100 V). APPLICATIONS •High-voltage general purpose •Switching applications. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BSS63 | 包装：散装 描述：TRANS PNP 100V 0.2A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BSS63 | PNP General Purpose Amplifier 文件：61.95 Kbytes Page：4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BSS63 | PNP General-Purpose Amplifier 文件：123.5 Kbytes Page：6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
High-voltage Amplifier Transistor Features 1) High breakdown voltage. (BVCEO=-100V) 2) Complements the BSS64 HZG. Application HIGH VOLTAGE AMPLIFIER | ROHM 罗姆 | | ||
High Voltage Transistor(PNP) PNP Silicon | Motorola 摩托罗拉 | | ||
General Purpose Transistors(PNP Silicon) PNP Silicon | LRC 乐山无线电 | | ||
High Voltage Transistor(PNP Silicon) High Voltage Transistors PNP Silicon | ONSEMI 安森美半导体 | | ||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | ||
PNP high-voltage transistor 1. General description PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 100 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
High Voltage Transistor Features ● SOT23 PNP silicon planar | KEXIN 科信电子 | | ||
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR COMPLIMENTARY TYPE - BSS64 PARTMARKING DETAIL - BSS63 - T3 BSS63R - T6 | Zetex | | ||
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR COMPLIMENTARY TYPE - BSS64 PARTMARKING DETAIL - BSS63 - T3 BSS63R - T6 | Zetex | | ||
PNP General-Purpose Amplifier 文件：123.5 Kbytes Page：6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 0.1A SST3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
High Voltage Transistor 文件：87.45 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistor 文件：87.45 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
BSS63产品属性
- 类型
描述
- 型号
BSS63
- 功能描述
两极晶体管 - BJT PNP/ 100V/ 200mA
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
PHI |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ONN |
23+ |
SOT23-3 |
6000 |
专业配单保证原装正品假一罚十 |
|||
ROHM |
21+ |
SOT-23 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
|||
恩XP |
24+ |
30000 |
房间原装现货特价热卖,有单详谈 |
||||
恩XP |
24+ |
SOT-23 |
8900 |
全新原装现货,假一罚十 |
|||
FAIRCHILD/仙童 |
23+ |
SOT-23 |
15000 |
全新原装现货,价格优势 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ROHM/罗姆 |
2427+ |
N/A |
8540 |
只做原装正品现货或订货假一赔十! |
BSS63规格书下载地址
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DdatasheetPDF页码索引
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