Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

丝印代码：SWs；N-Channel Enhancement Mode MOSFET

Features Vos = 30VIo = 2A Rosin

Small Signal MOSFET

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

N-Channel Enhancement Mode Power MOSFET

OptiMOS?? Small-Signal-Transistor

文件：271.78 Kbytes Page：9 Pages

OptiMOS?? Small-Signal-Transistor

文件：225.01 Kbytes Page：3 Pages

丝印代码：SWs；OptiMOS 2 Small-Signal-Transistor

文件：138.32 Kbytes Page：3 Pages

场效应管

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low

HIGH EFFICIENCY RECTIFIERS(3.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficien

Voltage Comparator

文件：97.42 Kbytes Page：6 Pages