P沟道增强模式小信号场效应晶体管 (FET)，-100 V，SOT-223

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

OptiMOS-P Small-Signal-Transistor

文件：284.82 Kbytes Page：8 Pages

OptiMOS -P Small-Signal-Transistor

文件：75.35 Kbytes Page：8 Pages

P-Channel Enhancement Mode MOSFET

Features | + -20V-07A Rosin 520mO@-4.5V Max a ROS(on)= 700mQ@-2.5V Max . RoS(on)= 950mQ(TYP)@-1.8V

OptiMOS-P Small-Signal-Transistor

文件：284.82 Kbytes Page：8 Pages

12-Channel High Voltage Analog Switch

General Description The Supertex HV209 is a 200V low charge injection 12-channel high voltage analog switch configured as 6 SPDT analog switches intended for medical ultrasound applications. Features ► HVCMOS® technology for high performance ► Operating voltage of up to 200V ► Out

12-Channel High Voltage Analog Switch

General Description The Supertex HV209 is a 200V low charge injection 12-channel high voltage analog switch configured as 6 SPDT analog switches intended for medical ultrasound applications. Features ► HVCMOS® technology for high performance ► Operating voltage of up to 200V ► Out

12-Channel High Voltage Analog Switch

General Description The Supertex HV209 is a 200V low charge injection 12-channel high voltage analog switch configured as 6 SPDT analog switches intended for medical ultrasound applications. Features ► HVCMOS® technology for high performance ► Operating voltage of up to 200V ► Out

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V