采用 SOT-23-3 封装的适用于工业和消费应用的 N 沟道耗尽型小信号晶体管

\n优势:\n• PCB-space and cost savings\n• Gate drive flexibility\n• Reduced design complexity\n• Environmentally friendly\n• High overall efficiency\n• Enables robust design\n• Industry standard qualification level;

丝印代码：FIs；Small-Signal Transistor

文件：1.53393 Mbytes Page：10 Pages

Small-Signal Transistor

文件：1.53393 Mbytes Page：10 Pages

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169

Thyristor logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages

Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages