SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS® Small-Signal Transistor ● VDS 200 V ● ID 0.35 A ● RDS(on) 3.5 Ω ● N channel ● Depletion mode ● High dynamic resistance ● Available grouped in VGS(th)

SIPMOS® Small-Signal Transistor

SIPMOS® Small-Signal Transistor● VDS 200 V\n● ID 0.35 A\n● RDS(on) 3.5 Ω\n● N channel\n● Depletion mode\n● High dynamic resistance\n● Available grouped in VGS(th)

PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology.

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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