PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits.

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4

PNP Medium Power Transistors

Features ● High current (max. 1 A) ● Low voltage (max. 80 V).

TRANSISTOR (PNP)

FEATURES ● Low Voltage ● High Current ● Complement to BSR43 APLICATIONS ● Medium Power Transistor

PNP medium power transistors

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current Complement to BSR43 AAPLICATIONS Medium Power Transistor

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Voltage ● High Current ● Complement to BSR43 APLICATIONS ● Medium Power Transistor

Silicon PNP epitaxial planer Transistors

Features • Low Voltage • High Current • Complement to BSR43 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -

80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • AEC-Q101 qua

80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：27.04 Kbytes Page：1 Pages

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：16.76 Kbytes Page：1 Pages

中等功率双极型晶体管

晶体管

80 V, 1 A PNP medium power transistor

80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface- Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). 2. Features and benefits • High collector current capability IC and ICM • Red

80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface- Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF). 2. Features and benefits • High collector current capability IC and ICM • Red

80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Qualified

80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO > -80V  IC = -1A High Continuous Current  Low saturation voltage VCE(sat)

封装/外壳：TO-243AA 包装：散装 描述：TRANS PNP 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件：294.22 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 80V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个