PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits.

PNP medium power transistors

PNP Medium Power Transistors

Features ● High current (max. 1 A) ● Low voltage (max. 80 V).

丝印代码：BR1；60 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • AEC-Q101 qualified 3. Applicatio

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Small Signal MOSFET

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丝印代码：LEs；OptiMOS 2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

OptiMOS짰2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

OptiMOS2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

丝印代码：BR1；60 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Qualified according to AEC-Q101 and

60 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. • High current\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：BSR30/SOT89/MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个