丝印代码：U92；NPN General Purpose Amplifier

Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

丝印代码：U92；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: BSR18A. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS SOT-23 Formed SMD Package N–P–N silicon transistor

Surface mount Si-Epitaxial PlanarTransistors

Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Switching Transistors

Features ● High current (max. 100 mA). ● Low voltage (max. 40 V).

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

NPN General Purpose Amplifier

该器件设计用于通用放大器和开关。 开关的有效动态电流范围已扩展至100 mA，放大器的频率已扩展至100 MHz。 采用工艺23设计。

SILICON PLANAR EPITAXIAL TRANSISTORS

Surface mount Si-Epitaxial PlanarTransistors

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN General Purpose Amplifier

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：带盒（TB） 描述：TRANS NPN 40V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个