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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSM200GB120DLC | IGBT-Modules 文件：90.79 Kbytes Page：8 Pages | eupec |   | |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 | | ||
封装/外壳：模块 包装：托盘 描述：IGBT MOD 1200V 420A 1550W 分立半导体产品 晶体管 - IGBT - 模块 | Infineon 英飞凌 | | ||
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate | SIEMENS 西门子 | |
BSM200GB120DLC产品属性
- 类型
描述
- 型号
BSM200GB120DLC
- 功能描述
IGBT 模块 1200V 200A DUAL
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
24+ |
module |
6000 |
全新原装正品现货 假一赔佰 |
|||
IGBT |
1950+ |
980 |
只做原装正品现货!或订货假一赔十! |
||||
INFINEON/英飞凌 |
18+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
EUPEC |
22+ |
模块 |
8000 |
原装正品支持实单 |
|||
EUPEC |
25+ |
MODULE |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
INFINEO |
18+ |
MODULE |
85600 |
保证进口原装可开17%增值税发票 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
EUPEC |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
EUPEC |
23+ |
模块 |
3562 |
BSM200GB120DLC芯片相关品牌
BSM200GB120DLC规格书下载地址
BSM200GB120DLC参数引脚图相关
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BSM200GB120DLC数据表相关新闻
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深圳好佳好科技有限公司 电话：0755-82559658 QQ：1728142002
2019-10-17
DdatasheetPDF页码索引
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